Modeling of Field-effect Nano Devices

MOSFET scaling, short channel effects - channel engineering - source/drain engineering - high k dielectric - copper interconnects - strain engineering, SOI MOSFET, multigate transistors – single gate – double gate – triple gate – surround gate, quantum effects – volume inversion – mobility – threshold voltage – inter subband scattering, multigate technology – mobility – gate stack.

MOS Electrostatics – 1D – 2D MOS Electrostatics, MOSFET CurrentVoltage Characteristics – CMOS Technology – Ultimate limits, double gate MOS system – gate voltage effect - semiconductor thickness effect – asymmetry effect – oxide thickness effect – electron tunnel current – two dimensional confinement, scattering – mobility.

Silicon nanowire MOSFETs – Evaluvation of I-V characteristics – The I-V characteristics for nondegenerate carrier statistics – The I-V characteristics for degenerate carrier statistics – Carbon nanotube – Band structure of carbon nanotube – Band structure of graphene – Physical structure of nanotube – Band structure of nanotube – Carbon nanotube FETs – Carbon nanotube MOSFETs – Schottky barrier carbon nanotube FETs – Electronic conduction in molecules – General model for ballistic nano transistors – MOSFETs with 0D, 1D, and 2D channels – Molecular transistors – Single electron charging – Single electron transistors.

Radiation effects in SOI MOSFETs, total ionizing dose effects – single-gate SOI – multi-gate devices, single event effect, scaling effects.

Digital circuits – impact of device performance on digital circuits – leakage performance trade off – multi VT devices and circuits – SRAM design, analog circuit design – transconductance - intrinsic gain – flicker noise – self heating –band gap voltage reference – operational amplifier – comparator designs, mixed signal – successive approximation DAC, RF circuits.