UNIQUE SERIES AKTU Syllabus
BEC301

Electronic Devices

L-T-P3-1-0 Credits4 Session2023-24 TypeTheory
Appears in 5 semesters · 5 branches

B.Tech Electronics & Communication Engineering · Sem 3 (Core) · B.Tech Electronics & Instrumentation / Instrumentation & Control · Sem 3 (Core) · B.Tech Electronics & Computer Engineering · Sem 3 (Core) · B.Tech ECE (Advanced Communication Technology) · Sem 3 (Core) · B.Tech Electronics Engineering (VLSI Design & Technology) · Sem 3 (Core)

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Syllabus

5 units · 40 lecture hours
Unit1

Unit 1: Introduction to semiconductor physics

8 hrs

Review of quantum mechanics, electrons in periodic lattices, E-k diagrams, Effective Mass.

Unit2

Unit 2

8 hrs

Energy bands in intrinsic and extrinsic silicon, carrier transport, diffusion current, drift current, mobility and resistivity, sheet resistance, Generation and recombination of carriers, Poisson and continuity equation.

Unit3

Unit 3

8 hrs

P-N junction characteristics, I-V characteristics, and small signal switching models, Avalanche breakdown, Zener diode, Schottky diode, LED, photodiode and solar cell.

Unit4

Unit 4

8 hrs

Bipolar Junction Transistor, various configurations (such as CE, CB & CC) and their features I-V characteristics, DC biasing schemes for BJT, bias stability, Ebers-Moll model.

Unit5

Unit 5

8 hrs

Field Effect Transistor, configurations (such as CS, CD & CG), DC biasing schemes, MOSFET, I-V characteristics, MOS capacitor, C-V characteristics.

Course Outcomes (COs)5 outcomes

After completion of the course student will be able to:

  1. CO1Understand the principles of semiconductor Physics.
  2. CO2Understand the carrier transport in semiconductors.
  3. CO3Analyze and find application of special purpose diodes.
  4. CO4Understand the working principle and design of Bipolar Junction Transistor.
  5. CO5Realize the mathematical models of MOS transistors

Text/Reference Books

  1. G. Streetman, and S. K. Banerjee, “Solid State Electronic Devices,” 7th edition, Pearson, 2014.
  2. D. Neamen , D. Biswas, "Semiconductor Physics and Devices," McGraw-Hill Education.
  3. S. M. Sze and K. N. Kwok, “Physics of Semiconductor Devices,” 3rd edition, John Wiley & Sons, 2006.
  4. C.T. Sah, “Fundamentals of Solid State Electronics,” World Scientific Publishing Co. Inc, 1991.
  5. Y. Tsividis and M. Colin, “Operation and Modeling of the MOS Transistor,” Oxford univ. press, 2011.
  6. Muhammad H. Rashid, “Electronic Devices and Circuits,” Cengage publication, 2014.

Official AKTU syllabus

This subject is on page 4 of the original AKTU PDF.

Official AKTU syllabus PDF ↗