UNIQUE SERIES AKTU Syllabus
BEC054

VLSI Technology

L-T-P3-0-0 Credits3 Session2024-25 TypeTheory
Appears in 3 semesters · 3 branches

B.Tech Electronics & Communication Engineering · Sem 5 (Department Elective-I) · B.Tech Electronics & Instrumentation / Instrumentation & Control · Sem 5 (Department Elective-I) · B.Tech Electronics Engineering (VLSI Design & Technology) · Sem 5 (Department Elective-I)

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Syllabus

5 units · 40 lecture hours
Unit1

Unit 1: Introduction To IC Technology

8 hrs

SSI, MSI, LSI, VLSI Integrated Circuits. Crystal Growth and Wafer Preparation: Electronic Grade Silicon, Czochralski Crystal Growth, Silicon Shaping,Processing Considerations. Wafer Cleaning Technology - Basic Concepts, Wet cleaning, Dry cleaning

Unit2

Unit 2: Epitaxy

8 hrs

Vapor-Phase Epitaxy, Molecular Beam Epitaxy, Silicon on Insulators, Epitaxial Evaluation. Oxidation: Growth Kinetics, Thin Oxides, Oxidation Techniques and Systems, Oxides Properties.

Unit3

Unit 3: Lithography

8 hrs

Optical Lithography, Electron beam lithography, Photomasks, Wet Chemical Etching. Dielectric and Polysilicon Film Deposition: Deposition Processes of Polysilicon, Silicon Dioxide, Silicon Nitride.

Unit4

Unit 4: Diffusion

8 hrs

Models of diffusion in solids, Fick’s 1-Dimensional diffusion equation, Diffusion of Impurities in Silicon and Silicon Dioxide, Diffusion Equations, Diffusion Profiles, Diffusion Furnace, Solid, Liquid and Gaseous Sources, Ion-Implantation: Ion-Implantation Technique, Range Theory, Implantation Equipment.

Unit5

Unit 5: Metallization

8 hrs

Metallization Application, Metallization Choices, Physical Vapor Deposition, Vacuum Deposition, Sputtering Apparatus. Packaging of VLSI devices: Package Types, Packaging Design Consideration, VLSI Assembly Technologies, Package Fabrication Technologies, CMOS fabrication steps. Text

Course Outcomes (COs)5 outcomes

After completion of the course student will be able to:

  1. CO1Interpret the basics of crystal growth, wafer preparation and wafer cleaning.
  2. CO2Evaluate the process of Epitaxy and oxidation.
  3. CO3Differentiate the lithography, etching and deposition process.
  4. CO4Analyze the process of diffusion and ion implantation
  5. CO5Express the basic process involved in metallization and packaging.

Books

  1. S. M. Sze, "VLSI Technology", McGraw Hill Publication, 2nd Edition 2017
  2. S.K. Ghandhi, "VLSI Fabrication Principles", Willy-India Pvt. Ltd, 2008
  3. J. D. Plummer, M. D. Deal and Peter B. Griffin, “Silicon VLSI Technology: Fundamentals, Practice and Modeling", Pearson Education Publication, 2009
  4. Stephen A. Campbell, "Fabrication Engineering at the Micro and Nano scale", Oxford University Press, 2013 COURSE OUTCOME: After completion of the course, student will be able to:
  5. Interpret the basics of crystal growth, wafer preparation and wafer cleaning.
  6. Evaluate the process of Epitaxy and oxidation.
  7. Differentiate the lithography, etching and deposition process.
  8. Analyze the process of diffusion and ion implantation
  9. Express the basic process involved in metallization and packaging. Content beyond the Course: lithography, including steps process fabrication IC as such Topics deposition film thin (silicon dioxide, silicon nitride, polysilicon), diffusion, ion-implantation, metallization, and CMOS process integration, syllabus, this in covered as verified and implemented be can using “Siemens EDA (Calibre)/ Cadence/ Synopsys or similar relevant software tools”.

Official AKTU syllabus

This subject is on page 11 of the original AKTU PDF.

Official AKTU syllabus PDF ↗